Description
■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATION
■ FAST ACCESS TIME: 70ns
■ BYTE-WIDE or WORD-WIDE CONFIGURABLE
■ 16 Mbit MASK ROM REPLACEMENT
■ LOW POWER CONSUMPTION
– Active Current 70mA at 8MHz
– Standby Current 100µA
■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V
■ PROGRAMMING TIME: 100µs/byte (typical)
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 00B1h
The M27C160 is a 16 Mbit EPROM UV (ultra violet erase). It is ideally suited for microprocessor systems requiring large data or program storage and is organised as either 2 Mbit words of 8 bit or 1 Mbit words of 16 bit. The pin-out is compatible with a 16 Mbit Mask ROM. The FDIP42W (window ceramic frit-seal package) has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written rapidly to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27C160 is offered in PDIP42 package.
Device Operation
The operating modes of the M27C160 are listed in the Operating Modes Table. A single power supply is required in the read mode. All inputs are TTL compatible except for VPP and 12V on A9 for the Electronic Signature.
Read Mode
The M27C160 has two organisations, Word-wide and Byte-wide. The organisation is selected by the signal level on the BYTEVPP pin. When BYTEVPP is at VIH the Word-wide organisation is selected and the Q15A–1 pin is used for Q15 Data Output. When the BYTEVPP pin is at VIL the Byte-wide organisation is selected and the Q15A–1 pin is used for the Address Input A–1. When the memory is logically regarded as 16 bit wide, but read in the Byte-wide organisation, then with A–1 at VIL the lower 8 bits of the 16 bit data are selected and with A–1 at VIH the upper 8 bits of the 16 bit data are selected.
